High temperature device and method for growth and post-treatment of silicon carbide materials

Introduction: A high-temperature device and method for the growth and post-treatment of silicon carbide materials. The high-temperature device for the growth and post-treatment of silicon carbide materials includes a radio frequency induction heating furnace and a silicon carbide barrel; The radio frequency induction heating furnace includes a furnace chamber, an induction heating body located in the furnace chamber from the inside to the outside in sequence, and an insulation felt; The silicon carbide barrel is located in the induction heating body, and the two ends of the silicon carbide barrel are respectively equipped with barrel covers and corresponding air ducts to form an integral part; The interior of the overall component is set up as a growth and post-processing area for silicon carbide materials, used for the circulation of growth gas or oxidizing gas; Among them, there are gaps between the overall component, induction heating element, insulation felt, and the inner wall of the furnace chamber, forming a gas flow channel for the circulation of inert gas for gas isolation. This technology can not only extend the service life of the induction heating element and insulation felt, but also prevent impurities from precipitating from the induction heating element and insulation felt at high temperatures and affecting the preparation of silicon carbide materials.

2. A carbon/silicon carbide composite material feeding cylinder for repeated feeding in monocrystalline silicon furnaces

Introduction: This technology provides a carbon/silicon carbide composite material feeding cylinder for repeated feeding in a single crystal silicon furnace, which includes the following steps: Step 1, alternately layer and needle punching T700 carbon fiber cloth and carbon fiber mesh tire to form a cylindrical preform, with a density of 0.4~0.5g/cm3; Step 2: Place the cylindrical preform into a chemical vapor deposition furnace to increase its density to 1.2~1.3g/cm3; Step 3: Place the above green body into a high-temperature graphitization furnace for graphitization treatment; Step 4: Machine the above billet into a feeding cylinder specification; Step 5: Place the mechanically processed green body into a vertical high-temperature ceramic furnace to prepare silicon carbide inside and on the surface of the green body. The advantage of its technical solution is that the carbon/silicon carbide composite material has high hardness and wear resistance, and will not cause secondary pollution to the silicon material; Excellent mechanical performance, greatly improving the reliability of the feeding cylinder, and reducing the risk of accidents; Good thermal shock resistance, able to withstand rapid cooling and heating, greatly reducing the time to transfer the feeding cylinder from the pulling cylinder, and effectively improving the production efficiency of single crystal silicon rods.

Low friction silicon carbide ceramic sealing material and its formulation technology reinforced by multiphase composites

Introduction: This technology provides a multiphase composite reinforced low friction silicon carbide ceramic sealing material. The raw material of this low friction silicon carbide ceramic sealing material is composed of the following weight percentage components: silicon carbide 86%~88%, Yttrium aluminium garnet 6%~8%, Graphene 1%~2.5%, nano zirconium diboride 1%~2.5%, and silicon carbide whisker 1%~2.5%. This technology also provides a formula technology for the low friction silicon carbide ceramic sealing material. The silicon carbide ceramic sealing material prepared by this technology not only has low friction coefficient but also high mechanical properties.

A Formula Technology for High Density Aluminum Silicon Carbide Composite Materials

Introduction: This technology provides a high-density aluminum silicon carbide composite material formula technology, which disperses aluminum particles in a silica sol, seals and stirs them, filters them, and then dries them to obtain modified aluminum powder; Mix the obtained modified aluminum powder with alumina and kaolin before mechanical stirring; Stir and mix the obtained powder and silicon carbide, then add polyethylene glycol liquid to maintain the rotational speed and continue stirring to obtain ceramic powder; Press the ceramic powder into a formed blank, and after heat treatment, cool it in the furnace to obtain a silicon carbide preform with a porosity of 30% to 40%; Perform pressureless aluminum infiltration on the obtained silicon carbide preform; High density aluminum silicon carbide composite material is prepared after cooling treatment. This technology not only improves the wettability of the aluminum liquid infiltration process, resulting in high-density aluminum carbide silicon composite materials, but also generates mullite whiskers that are beneficial for improving the mechanical properties of the composite materials.

5. An aluminum based silicon carbide high-density packaging semiconductor composite material

Introduction: An aluminum based silicon carbide high-density packaging semiconductor composite material, comprising the following steps: preparing a SiC composite slurry, first preparing a SiC slurry with a solid content of 30 70% using SiC micro powder, and then adding gold powder, silver powder, and palladium powder in a mass ratio of SiC: Au: Ag: Pd (50 60): (0.3 0.6): 1: (0.02 0.05) to obtain a SiC composite slurry; Tape casting is used to remove bubbles and mix the obtained SiC composite slurry evenly before casting to obtain a SiC composite tape casting film; Plain firing of the cast film, by firing the obtained cast film, a SiC composite blank is obtained; Vacuum sintering involves sintering SiC compliant billets in a vacuum state to obtain aluminum based silicon carbide. Beneficial effects of this technology: aluminum based aluminum nitride is prepared by gel tape casting. The process is simple, the product composition distribution is uniform, the porosity is low, and the semiconductor performance is superior. Moreover, by introducing gold, silver, and palladium powders, the sintering performance is fully improved, the sintering temperature is further reduced, and energy conservation and environmental protection are achieved.

6. Connecting Materials and Applications of Silicon Carbide with Crack Self healing Characteristics

Introduction: This technology provides a connecting material with crack self-healing characteristics for connecting silicon carbide and its application. The connecting materials include Al4C3, Al4SiC4, mixtures of Al4C3 and SiC, and mixtures of Al4SiC4 and SiC. This technology also provides the use of the connecting material in connecting silicon carbide materials. This technology also provides a connection method for silicon carbide materials, which includes setting a mixture of Al4C3, Al4SiC4, Al4C3 and SiC, as well as a mixture of Al4SiC4 and SiC at the connection interface of the silicon carbide materials to be connected, and heating to achieve high-strength connection between the silicon carbide materials to be connected. The silicon carbide connecting structure obtained by this technology has high Flexural strength, excellent high temperature resistance, oxidation resistance and corrosion resistance. It has the function of crack self healing at high temperature and can be used in extreme service environments such as aerospace and nuclear power systems.

A carbon fiber reinforced carbon silicon carbide Zirconium carbide composite and its formulation technology

Introduction: The technology relates to a carbon fiber reinforced carbon silicon carbide Zirconium carbide composite and its formulation technology. The method comprises the following steps: (1) depositing a pyrolytic carbon matrix on the surface of the carbon fibers included in the carbon fiber preform to obtain a modified carbon fiber preform; (2) Prepare a mixed resin solution with a mass ratio of (1-3): (4-6): 5:100 for silicon powder, zirconium powder, graphite powder, and phenolic resin; (3) Impregnate the modified carbon fiber preform with a mixed resin solution, and then cure and carbonize the impregnated modified carbon fiber preform in sequence; The carbonization reaction is carried out in an inert atmosphere, with a carbonization reaction temperature of 1650~1750 ℃ and a time of 0.5~2 hours; (4) Repeat step (3) at least once to prepare the composite material. The technology can make silicon carbide and Zirconium carbide evenly distributed in the composite, reduce the free metal content and improve the oxidation resistance and ablation resistance of the material.

A Kind of Silicon Carbide Composite Material and Its Formula Technology

Introduction: This technology belongs to the technical field of silicon carbide materials. It provides a silicon carbide composite and its formulation technology, including the following raw materials with weight percentage: silicon carbide powder 70 80%, metal powder 3 15%, Graphene 15%, adhesive 2 10%, water 10 20%; The method comprises: placing silicon carbide powder, metal powder and Graphene in a powder mixer for mixing and ball milling; Mix the adhesive with water to obtain a mixed adhesive; Add the mixed binder to the mixed powder for mixing, and then place it in hydraulic forming to obtain the embryo; Place the green body in a non oxidizing atmosphere sintering furnace for calcination, and cool it to obtain silicon carbide composite material. This technology has the advantages of low firing temperature, energy-saving, simple production process, low production cost, and long service life, high compressive strength, good thermal shock resistance, and good oxidation resistance for composite materials. It has broad economic and social value.

Formulation technology for a titanium based composite material containing titanium silicon intermetallic compounds and silicon carbide particles

Introduction: This technology provides a formula technology for titanium based composite materials containing titanium silicon intermetallic compounds and silicon carbide particles, including: 1) ball milling Ti3SiC2 powder to obtain uniform Ti3SiC2 powder; 2) Continue ball milling titanium alloy powder with uniform Ti3SiC2 powder to obtain a mixed powder; 3) Drying and sieving the mixed powder to obtain dry powder; 4) Using a hot press sintering system, the dry powder obtained in step 3) is sintered to form a titanium based composite material containing Ti5Si3 and TiC particles. This technology utilizes the decomposition of Ti3SiC2 in a titanium matrix to prepare TiC reinforcement phase through in-situ reaction. TiC is decomposed from Ti3SiC2 and does not change during sintering and subsequent processing. Ti5Si3 does not agglomerate with TiC particles, resulting in uniform distribution of reinforcement phase. The process operation is simple and requires low equipment requirements. Therefore, the applicability of the process is strong, and most titanium alloys can be used to prepare the titanium matrix composite materials described in this technology, Greatly expanding the application range of titanium alloys.

Formulation Technology and Application of 10 Aluminum Silicon Carbide Composite Materials

Introduction: This technology belongs to the field of material preparation and provides a formula technology for aluminum silicon carbide composite materials, which includes the following steps: 1) mixing silicon carbide particles with different particle sizes, adding binders and dispersants, and conducting secondary mixing to obtain raw materials; 2) Pressing raw materials into shape to prepare silicon carbide ceramic preforms; 3) Sintering silicon carbide ceramic preforms to form porous ceramics; 4) Under an inert gas atmosphere, the aluminum alloy is heated until it melts, and then pressed into the porous ceramic through inert gas pressure to form an aluminum silicon carbide composite material. Among them, the weight percentage of silicon carbide particles with different particle sizes in step 1) is: 1 μ M Silicon carbide particles 5-15%, 5 μ M Silicon carbide particles 15-20%, 15 μ 20 to 30% of m silicon carbide particles, and 35% for the rest μ M Silicon carbide particles. The aluminum silicon carbide composite material has excellent properties such as suitable thermal expansion coefficient, high elastic modulus, and high thermal conductivity, and is suitable for inertial navigation system platform structures.