We measured the silicide film (CoSi2, NiSi2, TiSi2 and WSi) rate of ise, and studied the dependence of ion energy, found their relative with the silicon dioxide thin film sputtering etching rate almost has nothing to do with the sputtering ion energy, from relatively sputtering etching rate and the cross section calculation of Ni and Si ratio to estimate the surface of the Ni binding energy, It is found that the surface binding energy determined by the relative sputtering etch rate is in agreement with the well-known value.

Thin films (Cosi2, Nisi2, Tisi2, WSi) are deposited on N-type Si (100) substrates by sputtering method, these are provided by the Surface analysis Group. It is polycrystalline, so the depth of one is measured by the sum of one step.

By the experiment and the relative sputtering etching rate of nickel on silicon ion energy dependence, using the least squares fitting nuclear can prevent cross-sectional area ratio and sputtering etching rate, get silicon ion energy dependence, based on these results, can be thought of by the measured don't know the key to the surface of the material, surface bond energy and atomic density known material and relative sputtering etching rate, The surface bond energy of a substance can be estimated by calculating the ratio of cross-sectional area of nuclear blocking energy.

Sputter crater depth measurement and measurement of silicide film sputtering etching rate, and check these samples relative to the energy dependence of the etching rate of SiO2, can discover, silicide film relative etching rate relative to the SiO2 has very little energy dependence, such as block from the core ability of cross-sectional area in the calculation of the expected, And energy-dependent relaxation is a practical advantage because it can estimate values at unmeasured energies. In addition, approximate surface binding energies of samples can be estimated from relative sputtering etching rates and cross section ratios of nuclear blocking capabilities.

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