Aluminum carbide 
Chemical formula: Al4C3 
Molecular weight: 143.96 CAS 
Appearance and characteristics: Yellow or green gray crystalline blocks or powders, with hygroscopicity. 
Melting point (℃): 2100 
Relative density (water=1): 2.36 
Boiling point (℃): 2200 (decomposition) 
Solubility: Insoluble in acetone

application 
Used for metallurgy, as a catalyst, and for methane production. 
Aluminum carbide is often used as an additive to enhance the strength of ternary aluminum based materials (Al Si AlC, Al AlTi AlC). Additionally, AlC is an important compound in the field of aluminum metal industry technology, 
Used in the metallurgical industry for reducing metal oxides, in the chemical industry for chemical reaction catalysts, and in the ceramic industry for producing advanced ceramic materials such as high temperature, cutting, and molds. As a kind of 
Ionic compounds, in the lattice structure of AlC, carbon atoms exist in the form of individual carbon atoms. C has strong alkalinity and produces methane through C+4H → CH during hydrolysis, so AlC also functions as 
Methane generator and desiccant. Meanwhile, the rhombic hexahedron of AlC is a structure in which AlC and AlC layers are alternately stacked. It is precisely this unique structure that makes one-dimensional AlC nanowires a type of material 
A highly promising cold electron emitter. 
1) Preparation of aluminum nitride powder based on aluminum carbide, including: (a) uniformly mixing an appropriate amount of micro aluminum powder and micro carbon powder, heating to a predetermined temperature in an inert atmosphere, holding for a period of time, and allowing it to react to form 
Aluminum carbide; (b) Heat aluminum carbide in flowing ammonia or nitrogen gas to a predetermined temperature and hold for a period of time, then react with ammonia or nitrogen gas at high temperature to produce aluminum nitride. Through the present invention, 
Aluminum nitride powder can be prepared at relatively low temperatures, with high purity, small particle size, uniform particle size distribution, high thermal conductivity, and excellent thermal and mechanical properties, 
It can be widely applied in the field of substrate materials for integrated circuits. 
2) Prepare an aluminum carbide nanobelt. Place a crucible containing aluminum silicon alloy inside the furnace, close the furnace door and evacuate to 50Pa~10-3Pa, then fill it with protective gas argon and raise the temperature to 700 ℃~1600 ℃ 
Insulate for 1-20 hours, then naturally cool to room temperature, and generate many yellow aluminum carbide nanoribbons on the surface of the alloy and the inner wall of the graphite crucible. The aluminum carbide nanobelt prepared by the present invention has a thin thickness and few impurities; 
The length of aluminum carbide nanoribbons can reach several millimeters; The cost of growing aluminum carbide nanoribbons is very low; There is no environmental pollution and the preparation equipment is simple.