Product Name: Vanadium Diboride (VB2) 
Specification: 0.8-10um (D50) 
Appearance: Irregular 
Color: Black Grey 
Features: high melting point, high hardness, good electrical and thermal conductivity, and resistance to molten metal erosion 
Application: Electric ceramic materials, wear-resistant materials, semiconductor thin films and other fields

Name: Vanadium diboride 
Chemical formula: VB2 
Color: Black Grey 
Crystal: Irregular 
Melting point: 2980 ℃ 
Density: 3.77g/cm3 
Melting point: 2450 ° C 
Density: 5.1 g/mL at 25 ° C (lit.) 
CAS number: 12007-37-3 
MDL Number: MFCD00049697 
Synthesis method: Mix element boron and element niobium in proportion, press and shape, and heat in a heating furnace to obtain. 
Product performance: VB2 has the characteristics of high melting point, high hardness, good electrical and thermal conductivity, and resistance to molten metal erosion. It can be used to make ultra-high temperature structural materials and has important applications in extreme environments such as ultra-high temperature and metal smelting. In addition, VB2, as an electrode material for alkaline batteries, has a large discharge capacity and is a new type of energy material. It can also be used in fields such as conductive ceramic materials. 
Purpose: 
1. Metal borides can be used to produce batteries or fuel cells, which can be an alternative energy source for petroleum resources. The electrochemical energy storage technology based on multi electron oxidation of metal borides, such as vanadium boride, is expected to replace existing batteries based on single electron charge storage in Chemicalbook. The multi electron oxidation of vanadium boride anode coupled with carbon air cathode can provide excellent electrochemical energy storage capacity due to its multi electron charge storage capability. 
2. Used in the fields of conductive ceramic materials, fine ceramic raw material powders, etc., it belongs to atomic crystals. 
3. Vanadium boride can also be used for wear-resistant coatings, which have high hardness H ≥ 35GPa and a friction coefficient of 0.4-0.6 
4. Semiconductor thin films 
Packaging and storage: 
Sealed and stored in a dry and cool environment, not exposed to air, to prevent moisture from causing oxidation and aggregation, affecting dispersion performance and usage effectiveness.