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Titanium Trisilicide(Ti5Si3 )

Titanium Trisilicide(Ti5Si3 )

  • Classification:Silicide series
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  • Date of issue:2025-04-21 13:57:57
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Titanium Trisilicide

Product Name: Titanium Trisilicide (Ti5Si3) 
Specification: 0.8-10um (D50) 
Appearance: Irregular 
Color: Black Grey 
Features: high melting point, low density, good high-temperature stability, oxidation resistance 
Purpose: Optical coating 

Ti5Si3

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Pentatitanium trisilicide 

Chemical formula: Ti5Si3 

CAS number: 12067-57-1 

Density: 4.10 g/cm ³ 

Melting point: 2130 ℃ 

Molecular weight: 323.59 

EINECS number: 235-082-9 

Resistance: 55 (ρ/μ Ω. cm) 

Characteristics: It has low density (close to titanium alloy), high hardness, good high-temperature stability, and oxidation resistance, suitable for use in high-temperature (>1600 ℃) environments. Stable chemical properties, low film resistivity, suitable for the field of microelectronics. 

Preparation method: 

1. Mechanical alloying method: By high-energy ball milling titanium (Ti) and silicon (Si) powders, using carbon tetrachloride as the process control agent, optimizing the ball to material ratio, rotation speed, and time, ultrafine and dispersed Ti ₅ Si Ⅲ powder can be prepared. This method has low energy consumption and is suitable for large-scale production. 

2. In situ reaction sintering method: Mix titanium and silicon with other reinforcing materials (such as carbon nanotubes, zirconium carbide, etc.), and directly generate Ti ₅ Si Ⅲ - based composite materials through vacuum hot pressing sintering (temperature 1350-1450 ℃, pressure 20-40 MPa). This method can reduce impurity phases and improve material density. 

application area  

1. High temperature structural materials: used for aerospace engine components, high-temperature resistant components for ships and submarines, replacing nickel based alloys to reduce weight and improve temperature resistance. 

2. Electronic devices: The low resistivity characteristic makes them suitable for use as metal silicide electrodes in integrated circuits, such as in the self-aligned silicide process of transistors, to optimize device conductivity. 

3. Composite matrix: Combined with reinforcing materials such as carbon nanotubes, Ti ∝ SiC ₂, or zirconium carbide (ZrC) to form high-strength and tough composite materials. For example, doping carbon nanotubes can increase fracture toughness by 53% and flexural strength by 56%. 

Packaging and storage: This product is packaged in an inert gas filled plastic bag, sealed and stored in a dry and cool environment. It should not be exposed to air to prevent moisture from causing oxidation and aggregation, which may affect dispersion performance and usage effectiveness; The packaging quantity can be provided in separate packages according to customer requirements.

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