Chinese name: tantalum nitride
English name: tantalum nitide
CAS No.: 12033-62-4
Density: 13.4 g/cm3
Crystal form: black hexagonal crystal
Melting point: 3090 ° C
Chemical formula: NTa
Resistivity: 128 μ Ω· cm
Thermal conductivity: 9.54W/(m · K)
Molecular weight: 194.95500
Precision quality: 194.95100
Microhardness: 1100kg/m2
Thermal conductivity: 9.54W/(m · K)
Lattice constant: a=0.4336nm, c=0.4150nm
Water solubility: insoluble in water and acid, slightly soluble in aqua regia, soluble in potassium hydroxide and decomposed to release ammonia, and heated to 2000 ℃ to release nitrogen.
Preparation method
1. The metal tantalum powder is directly nitrided with nitrogen or ammonia at about 1100 ℃.
2. Tantalum nitride is prepared from metal tantalum and nitrogen. The reaction formula is as follows: 2Ta+N2=2TaN
The metal tantalum powder is directly nitrided with nitrogen or ammonia at about 1100 ℃.
Function/purpose
1. Tantalum nitride resistance is a material used to make accurate sheet resistance, which can resist the erosion of water vapor. In the process of manufacturing integrated circuits, these films are deposited on the top of the silicon wafer to form a thin film surface-mounted resistor. Tantalum nitride resistance is a material used to make sheet resistance, which can resist the erosion of water vapor. Tantalum nitride material is used to make the protective layer of chip wire.
2. As an additive for superhard materials, pure tantalum pentachloride can be prepared. It can be used for spraying to increase the electrical stability of transformers, integrated circuits and diodes.
Packaging and storage: This product is packed in inert gas filled plastic bags, sealed and stored in a dry and cool environment, and should not be exposed to the air, to prevent oxidation and agglomeration due to moisture, which will affect the dispersion performance and use effect; The number of packages can be provided according to the customer's requirements