Product Name: Vanadium Disilicide (VSi2) 
Specification: 0.8-10um (D50) 
Appearance: Irregular 
Color: Black Grey 
Characteristics: Antioxidant stability 
Purpose: To prepare large-scale integrated circuits

English name: VANADIUMSILICIDE 
Molecular formula: Si2V 
Molecular weight: 107.11 
MOLFile:12039-87-1.mol 
CAS number: 12039-87-1 
EINECS number: 234-908-5 
Melting point: 1677 ° C 
Density: 4.42 g/cm3 
Accurate quality: 106.897817 
Single isotope mass: 106.897817 
Preparation: It is obtained by direct reaction of vanadium metal and elemental silicon in a ratio under inert gas protection at high temperature. 
Usage: Silicides are key materials for preparing large-scale integrated circuits. They can be used as ohmic contacts, Schottky barriers, and electrode leads for circuits. The junction depth of ultra large scale integrated circuits is very shallow, such as the PN junction depth of 64 megabit ultra large scale integrated circuits, which is as shallow as 200nm. Using conventional methods to prepare electrode leads on such shallow junction surfaces often leads to PN junction breakdown and circuit failure. Therefore, it is necessary to prepare thin layers of silicides, among which vanadium silicide is the best choice. In recent years, with the development of high-speed integrated circuits, there has been a demand for the preparation of metal based transistors (MBT) and through transistors (PBT). Ion implantation synthesis of thin layer silicides has become a new hotspot. However, using conventional ion implantation machines to inject synthesized silicides results in low efficiency due to the limited number of metal ion species extracted, weak beam current. 
1. Prepare vanadium silicide thin films. By injecting vanadium metal ions with high beam density into silicon, it is possible to directly synthesize thin layer silicides with good performance. As the beam density increases, the vanadium silicide phase grows, and the sheet resistance RS of the thin layer silicide significantly decreases. When the beam density is 25 μ A/cm2, Rs reaches a minimum value of 22 PSI, indicating the formation of continuous silicide. X-ray diffraction analysis showed that four types of vanadium silicides, V3Si, V5Si3, V3Si5, and VSi2, were formed in the injection layer. After annealing, Rs significantly decreased, and the minimum Rs for cosmetic raw materials can be reduced to 9 PSI, with a resistivity as low as 72 μ PSI m. This indicates that the quality of the vanadium silicide thin layer has been further improved. After high beam density injection and annealing, the vanadium silicide phase further grows. High beam density injection and high-temperature annealing (1200 ℃) still have very low thin layer resistivity, which fully demonstrates the excellent thermal stability of vanadium silicide. Transmission electron microscopy observation shows that the thickness of the continuous vanadium silicide thin layer is 80nm. 
2. Prepare a sound-absorbing ceramic material. The material comprises a matrix layer and a surface layer, wherein the matrix layer comprises various substances with the following weight components: 11-22 parts of nickel trioxide, 5-11 parts of magnesium aluminum silicate, 4-8 parts of boron nitride, 2-6 parts of vanadium silicide, 4-7 parts of glass fiber, and 6-10 parts of manganese oxide; The surface layer comprises the following weight components of various substances: 3-7 parts thorium dioxide, 3-8 parts bismuth silicate, 5-10 parts chlorohydrin rubber, 4-9 parts polyamide resin, and 7-11 parts glycerophosphate ester. By using ceramic material as the substrate layer and coating a surface layer with sound absorption properties on the substrate layer, a sound absorbing ceramic material is prepared by combining the two. It not only has sound absorption function, but also has good dust and fire resistance properties, significantly extending its service life. 
3. Prepare a composite high-strength zirconia ceramic material. The ceramic material includes 20-40 parts zirconia, 5-12 parts silicon carbide, 4-10 parts tungsten carbide, 3-7 parts boron nitride, 3-7 parts zirconium boride, 2-7 parts molybdenum boride, 2-6 parts tungsten silicide, 2-6 parts barium silicide, 2-4 parts vanadium silicide, and 3-6 parts tantalum boride. The preparation method includes the following steps: Step 1: Mechanically ball mill each component in a ball mill; Step 2: After ball milling, the ceramic material is sintered at high temperature in a sintering furnace at a heating rate of 30-70 ℃/min. The temperature is first raised to 900-950 ℃ and kept constant for 2 hours, then raised to 1250-1350 ℃ and kept constant for 3 hours before being lowered to room temperature to prepare composite high-strength zirconia ceramic material. 
4. Prepare a pressure resistant and heat-resistant ceramic material for acid production from phosphogypsum and fly ash. The process includes the following steps: mixing and grinding phosphogypsum, fly ash, additives, and modifiers to make raw materials, sending them into the kiln for calcination, and producing clinker; The produced clinker is dissolved and subjected to solid-liquid separation; Separate the residue obtained by flotation to obtain sulfides; Process the separated sulfides to produce sulfuric acid; Prepare high-purity alumina powder from the separated solution; Mix high-purity alumina powder evenly with barium oxide, calcium oxide, chromium trioxide, vanadium silicide, hafnium carbide, and zirconium boride, and ball mill to obtain the mixed material; High temperature sintering of mixed materials to obtain pressure resistant and heat-resistant ceramic materials. The above materials have the characteristics of low cost in acid production and preparation of pressure resistant and heat-resistant ceramic materials, high utilization rate of waste residue, simple process, and good strength in pressure resistance and heat resistance when prepared using high-purity alumina powder. 
5. A composite bioceramic material. The bioceramic material comprises 12-18 parts of calcium aluminate, 10-16 parts of silicon oxide, 14-20 parts of aluminum phosphate, 10-15 parts of magnesium aluminum silicate, 5-8 parts of calcium oxide, 3-7 parts of zirconium silicate, 6-11 parts of niobium silicate, 5-13 parts of vanadium silicate, 4-9 parts of boron nitride, and 6-10 parts of molybdenum boride. The preparation method is as follows: (1) Take the above materials and mix them at high speed; (2) Use a ball mill for ball milling; (3) Compression molding is carried out in a hot press furnace. The temperature of the hot press furnace is raised to 760-800 ℃, held for 1 hour, and then raised to 1230-1430 ℃. High temperature sintering is carried out, and after cooling to room temperature, the composite bioceramic material is obtained. 
Packaging and storage: This product is packaged in an inert gas filled plastic bag, sealed and stored in a dry and cool environment. It should not be exposed to air to prevent moisture from causing oxidation and aggregation, which may affect dispersion performance and usage effectiveness; The packaging quantity can be provided according to customer requirements and divided into smaller packages.