Titanium Disilicide (TiSi2) 
Specification: 0.8-10um (D50) 
Appearance: Irregular 
Color: Black Grey 
Features: high melting point, stable chemical properties, low electrical resistivity, good conductivity, high temperature stability, and oxidation resistance 
Usage: Microelectronics field, aerospace industry, shipbuilding and submarine manufacturing, medical, jewelry manufacturing and other fields

English name: titanium disilicide 
CAS：12039-83-7 
Molecular formula: TiSi2
Molecular weight: 104.03800 
Density: 4.39 g/cm3 
Melting point: 1540 ° C 
Boiling point: 1540 ° C 
Molecular weight: 104.04 
Appearance: Grey black 
Stability: Stable at room temperature and pressure, avoiding material oxide acidity and alkalinity 
Production method: 1. Place titanium metal and silicon metal into an electric arc furnace and melt them at 1100 ℃ in an argon atmosphere to produce titanium disilicide. 2. Adopt synthetic method. Put titanium and silicon metal into an electric arc furnace and melt them at 1100 ℃ in an argon atmosphere to produce titanium disilicide. 
nature: 
Titanium silicide (TiSi2) has very ideal characteristics: high conductivity, high selectivity, good thermal stability, good adsorption of Si, good process adaptability, and low interference with silicon connection parameters. Therefore, titanium silicide is widely used in the manufacturing of gates, source/drain electrodes, interconnects, and ohmic contacts of metal oxide semiconductors (MOS), metal oxide semiconductor field-effect transistors (MOSFET), and dynamic random access memory (DRAM) in integrated circuit devices. Metal silicides can be prepared by physical vapor deposition (sputtering, thermal evaporation, etc.) and chemical vapor deposition (CVD). The purpose of preparing titanium silicide is to obtain low resistance TiSi2. TiSi2 has two polycrystalline phases: the metastable C49 phase and the thermodynamically stable C54 phase. C49 phase belongs to the orthorhombic bottom center crystal system; Each unit cell is composed of 12 atoms; The unit cell size is: a=0.362nm, b=1.376nm, c=0.360nm; The resistivity is ρ=60~100 μ Ω· cm. C54 phase is an orthorhombic crystal system, with each unit cell consisting of 24 atoms; The unit cell size is: a=0.826nm, b=0.480nm, c=0.853nm; The resistivity is ρ=12~20 μ Ω · cm [24]. Due to the resistivity of TiSi2 in C54 phase being comparable to that of the metal body, obtaining TiSi2 in C54 phase is the purpose of preparing titanium silicide. 
Purpose: 
Titanium silicide is widely used in the manufacturing of gates, source/drain electrodes, interconnects, and ohmic contacts in metal oxide semiconductors (MOS), metal oxide semiconductor field-effect transistors (MOSFET), and dynamic random access memory (DRAM). Examples of its applications are as follows: 
1) A titanium silicide barrier layer is prepared, and a device using the manufacturing method of the titanium silicide barrier layer comprises a non silicon region and a silicon region separated by an isolation region. The upper surface of the device is covered with a sacrificial oxide layer. The present invention comprises: using a photolithography process to cover the non silicon region with photoresist, exposing the silicon region; Using wet etching process to remove the sacrificial oxide layer in the silicon region; Amorphous treatment is performed on the exposed silicon in the silicon region, followed by As implantation; Remove the remaining photoresist in the non silicon region; Sputtering titanium metal for the first alloying treatment; Wet etching is used to remove titanium metal that has not yet formed an alloy, followed by a second alloying treatment. The present invention eliminates the silicon block oxide layer in the prior art, reducing process costs; At the same time, it reduces the loss of isolation oxide film caused by etching and improves process stability. 
2) Preparation of an in-situ synthesized titanium silicide (Ti5Si3) particle reinforced aluminum carbide titanium (Ti3AlC2) based composite material. By adding a certain amount of silicon, Ti3AlC2/Ti5Si3 composite materials with different volume ratios were prepared, where the volume percentage of titanium silicide particle reinforced phase was 10-40%. The specific preparation method is as follows: firstly, titanium powder, aluminum powder, silicon powder, and graphite powder are used as raw materials, and the molar ratio of Ti: Al: Si: C is 3: (1.1-x): x: (1.8-2.0), where x is 0.1-0.5. The raw material powder is mixed by physical and mechanical methods for 8-24 hours, loaded into a graphite mold, and subjected to a pressure of 10-20MPa. It is sintered in a hot press furnace with a protective atmosphere, with a heating rate of 10-50 ℃/minute, a sintering temperature of 1400-1600 ℃, a sintering time of 0.5-2 hours, and a sintering pressure of 20-40MPa. The present invention can prepare high-purity and high-strength aluminum titanium carbide/titanium silicide composite materials at lower temperatures and in a shorter time. 
3) Preparation of composite functional titanium silicide coated glass. Deposition of a thin film on a regular float glass substrate or deposition of a silicon thin film between them. By preparing composite films of titanium silicide and silicon or doping a small amount of active carbon or nitrogen into the films, composite films of titanium silicide composite silicon carbide or titanium carbide or titanium silicide composite silicon nitride or titanium nitride can be obtained, which can improve the mechanical strength and chemical corrosion resistance of the coated glass. The present invention is a new type of coated glass that combines dimming insulation and low emissivity glass functions. 
4) A semiconductor device is prepared, comprising a silicon substrate on which a gate electrode, a source electrode, and a drain electrode are formed. A layer of insulation is formed between the gate electrode and the silicon substrate, and the gate electrode is composed of a polycrystalline silicon layer located on the insulation layer and a titanium silicide layer located on the polycrystalline silicon layer. A protective layer is formed on the titanium silicide layer, and three structural layers are surrounded by the protective layer, the titanium silicide layer, the polycrystalline silicon layer, and the insulation layer. From inside to outside, there are silicon nitride spacer layers, affinity layers, and silicon oxide spacer layers. A titanium silicide layer is formed on the source and drain electrodes. An inner dielectric layer is formed on the silicon substrate, and a contact window opening is formed in the inner dielectric layer. By adopting the above technical solution, this utility model can completely insulate the wires inside the gate and contact window, and prevent short circuits from occurring. 
Storage method: 
This product should be sealed and stored in a dry and cool environment, and should not be exposed to air for a long time to prevent moisture from causing aggregation, affecting dispersion performance and use effectiveness. In addition, it should be avoided from heavy pressure, and should not come into contact with oxidants. It should be transported as ordinary goods.